服務(wù)熱線
4001027270
產(chǎn)品型號(hào)
Item
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ST-ncY-Φ50
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ST-ncZ-Φ50
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ST-ncH-Φ50
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尺寸
Size (mm)
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50.8±0.5
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襯底結(jié)構(gòu)
Substrate Structure
|
GaN on Sapphire(0001) | |||||||||
厚度
Thickness (um)
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Al2O3 :430±25; GaN : Customized Sized
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GaN層厚度均勻性
GaN Thickness Uniformity
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≤ ±5%
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晶向
Orientation
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C-axis(0001)±0.5°
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導(dǎo)電類型
Conduction Type
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Un-doped
N-type
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N-type
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High-doped
N-type
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載流子濃度
Carrier Concentration
(cm-3)
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≤2×1017
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≥1×1018 | ≥5×1018 | |||||||
位錯(cuò)密度
Dislocation Density
(cm-2)
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Grade A
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Grade B
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≤5×107
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≤5×108
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包裝
Package
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Packaged in a class 100 clean room environment. |
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