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    JNG15N120HS

    應(yīng)用于半導(dǎo)體行業(yè):

    半導(dǎo)體器件-其他器件類(lèi)

    產(chǎn)品品牌

    jiaensemi

    規(guī)格型號(hào):

    JNG15N120HS 1200V 15A

    庫(kù)       存:

    10000

    產(chǎn)       地:

    全國(guó)

    數(shù)       量:

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    價(jià)       格:

    4.60
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    品牌:jiaensemi

    型號(hào):JNG15N120HS 1200V 15A

    所屬系列:半導(dǎo)體器件-其他器件類(lèi)

    Absolute Maximum Ratings                                                                                                                    

     

    Symbol

    Parameter

    Value

    Units

    VCES

     Collector-Emitter Voltage

    1200

    V

    VGES

     Gate-Emitter Voltage

    +20

    V

    IC

     Continuous Collector Current( TC=25℃)

    30

    A

     Continuous Collector Current ( TC=100℃)

    15

    A

    ICM

     Pulsed Collector Current (Note 1)

    45

    A

    IF

     Diode Continuous Forward Current( TC=100℃)

    15

    A

    IFM

     Diode Maximum Forward Current (Note 1)

    45

    A

    tsc

     Short Circuit Withstand Time

    10

    us

    PD

     Maximum Power Dissipation( TC=25℃)

    180

    W

     Maximum Power Dissipation( TC=100℃)

    70

    W

    TJ

     Operating Junction Temperature Range

    -55 to +150

    TSTG

     Storage Temperature Range

    -55 to +150

    Thermal Characteristics

    Symbol

    Parameter

    Max.

    Units

    Rth j-c

     Thermal Resistance, Junction to case for IGBT

    0.68

    ℃/W

    Rth j-c

     Thermal Resistance, Junction to case for Diode

    0.95

    ℃/W

    Rth j-a

     Thermal Resistance, Junction to Ambient

    40

    ℃/W

     

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