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外露光刻膠的研制是光刻膠研制過程中最關(guān)鍵的步驟之一,因此對研制過程及其參數(shù)(溫度、研制時間等)的選擇要特別注意。在噴淋顯影過程中,對每個基板分別進行單獨顯影,并在暴露區(qū)域連續(xù)噴淋新顯影劑或蝕刻劑,以防止顯影劑飽和。
SAWATEC開發(fā)人員可用于水坑或噴霧開發(fā),在此過程中,根據(jù)應(yīng)用程序的技術(shù)和經(jīng)濟標(biāo)準選擇最佳流程。與水坑開發(fā)相比,噴霧開發(fā)的優(yōu)點是可以釋放非常小的精細結(jié)構(gòu)。水坑法的優(yōu)點是,當(dāng)襯底有較深的結(jié)構(gòu)時,顯著較少的顯影液需要和較好的結(jié)果。
SMD系列用于清洗和顯影8英寸(200mm)以下的晶圓或6英寸(150x150mm)以下的基板。過程——室工作Ø212毫米。
由SAWATEC公司開發(fā)的SMD具有良好的工藝性能、低的化學(xué)消耗和可靠的重復(fù)性,甚至具有較厚的光刻膠層。由于操作簡便,易于清洗,這些儀器是理想的適合于實驗室,研發(fā),研究所和試點項目。
該儀器可作為臺式或移動式機柜。
功能(基本配置)
§ Up to 50 programmes with 24 segments each can be programmed
§ Quick start function for repeat processes
§ User-friendly process configuration with touch screen panel
§ Process parameter: speed, acceleration, process time, speed of the spray arm, developing spray time
§ Electrical driven spray arm, with dynamic or static function
§ Developer line and media tank (2 litre) for one developer included
§ Nozzle for DI-water-rinse and N2 drying on the spray arm
§ Nozzles in the process bowl for the backside rinse
§ Control elements for dosing of the compressed air and vacuum
§ Rotational direction can be selected (CW, CCW)
§ Manual loading and unloading of the substrates
Mechanical substrate fixation
§ Acoustic signal when the process has finished
§ Speed range: 0 to 3’000rpm +/-1rpm 1)
§ Speed acceleration: 0 to 3’000rpm in 0.3 seconds 1)
§ Process time up to 2376 seconds
§ Developer spray time 99 seconds/segment
§ Speed of the spray arm 10 to 200mm/seconds
§ Rinse and N2 drying 99 seconds/segment
§ Heatable process hood up to 50°C
§ Spray nozzle made of PEEK 0,8mm
§ Additional developer lines (up to 4 developer lines possible)
§ Start/stop foot switch for ease of operation (cable length 1.8m)
§ Separation unit for media exhaust (tank and laboratory equipment)
§ Developer tank heating system (2 litre)
§ Spray nozzle made of PEEK (0,3 / 0,5mm)
§ Nozzle for puddle developing
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