服務熱線
4001027270
MORSENSEMI 3英寸GaAs單晶片主要參數(shù)指標
Item |
Unit |
Specifications |
Remarks |
Crystal Growth Method |
VGF |
||
Dopant |
Si |
Zn-doped available |
|
Diameter |
inch |
2", 3", 4" & 6" |
|
Orientation |
2°/6°/15° off |
Other orientations available |
|
OF/IF |
EJ or US |
||
Carrier Concentration |
/cm3 |
(0.4-4)×1018 |
|
Mobility |
cm2/v.s |
1500-3000 |
|
Etch Pit Density(EPD) |
/cm2 |
<5000 |
|
Laser Marking |
Upon request |
||
Thickness |
μm |
220-350 |
Other thickness available |
TTV, Bow, Warp |
<10 |
||
Surface |
P/E , P/P |
||
Epi-Ready |
Yes |
||
Package |
Single or Cassette |
購買之前,如有問題,請向我們咨詢