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分類/Category | 應用/Application | 說明/Description |
InP基半導體光電外延片 InP based epiwafer |
FP laser | ~1310 nm/~1550 nm/~1650 nm/~2000 nm/~2300 nm |
DFB laser | 1270-1630 nm/~2000 nm/~2300 nm | |
Avalanche photodiode | 1250-1600 nm | |
Photodiode | 1250-1600 nm/>2000 nm (InGaAs absorptive layer) <1400 nm (InGaAsP absorptive layer) |
|
InAs/InP quantum dot laser | 1500-1850 nm | |
InAs/InP quantum dot SOA | 1500-1850 nm |
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